AZOM

Plasma Etching of SiO2 with High Selectivity Against Si3N4 and Si

Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
Nature

Mechanism of selective SiO2/photoresist reactive ion etching in an inductively coupled plasma operated in a C4F8/H2 gas mixture

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...
Semiconductor Engineering

Accelerating Dry Etch Processes During Feature Dependent Etch

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
Nanowerk

New metrology for tuning the etch rate uniformity in plasma etch processes

(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
AZOM

Deposition of High Quality Films by the Inductively Coupled Plasma CVD Process

An extensive range of insulating thin films are utilized in modern VLSI circuits providing electrical isolation between conducting regions within a device and as a final capping passivation layer.