Researchers from Penn State have demonstrated a novel method of 3D integration using 2D materials. This advancement, detailed in their recent study, addresses the growing challenge of fitting more ...

Researchers at Berkeley Lab, using a trio of single-atom-thick wonder materials -- graphene, boron nitride, and molybdenite -- have created the first all-2D field-effect transistor. This FET could ...

A new method enables 2D-material semiconductor transistors to be directly integrated onto a fully fabricated 8-inch silicon wafer, which could enable a new generation of transistor technology, denser ...

A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

(Nanowerk News) A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...